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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1293 DESCRIPTION *With TO-220C package *Low collector saturation voltage *Complement to type 2SD1896 *Wide area of safe operation APPLICATIONS *For use in low frequency power amplifier applications,power drivers and DC-DC converters PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -5 -5 -10 40 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-1mA; IB=0 IC=-50A; IE=0 IE=-50A; IC=0 IC=-3A ;IB=-0.3A IC=-3A ;IB=-0.3A VCB=-100V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IE=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz 60 MIN -100 -100 -5 2SB1293 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V V V -1.0 -1.5 -10 -10 320 12 120 V V A A MHz pF hFE Classifications D 60-120 E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1293 Fig.2 Outline dimensions (unindicated tolerance: 0.10 mm) 3 |
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